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Researchers show that stretching can change the electronic properties of graphene

A research team led by the University of Basel has found that the electronic properties of graphene can be specifically modified by stretching the material evenly.The researchers, led by Professor Christian Schönenberger at the Swiss Nanoscience Institute and the...
Researchers report a highly efficient graphene/hBN-based electro-absorption modulator

Researchers report a highly efficient graphene/hBN-based electro-absorption modulator

ICFO researchers led by Professor Frank Koppens, in collaboration with researchers from Universita di Pisa, CNIT, Ghent University-IMEC, and NIMS, have reported a novel electro-absorption (EA) modulator capable of showing a 3-fold increase in static and dynamic...
AIXTRON’s new graphene and hBN industrial grade reactor goes into operation

AIXTRON’s new graphene and hBN industrial grade reactor goes into operation

AIXTRON has developed, built and installed a new, specific industrial grade reactor for graphene and hexagonal Boron Nitride (hBN) processing on 200 mm epi-wafers. The new CVD tool was developed as part of the GIMMIK research project and has recently gone into...
Researchers achieve direct visualization of of quantum dots in bilayer graphene

Researchers achieve direct visualization of of quantum dots in bilayer graphene

Researchers at UC Santa Cruz have reported the first direct visualization of quantum dots in bilayer graphene, revealing the shape of the quantum wave function of the trapped electrons. The finding of this research could provide important fundamental knowledge,...

University of Manchester team discovers a new family of quasiparticles in graphene-based superlattices

Researchers at The University of Manchester, led by Sir Andre Geim and Dr Alexey Berdyugin, have discovered and characterized a new family of quasiparticles named ‘Brown-Zak fermions’ in graphene-based superlattices. This was achieved by aligning the...
Researchers examine novel inkjet-printed graphene for high‐quality large‐area electronics

Researchers examine novel inkjet-printed graphene for high‐quality large‐area electronics

Researchers from the University of Nottingham’s Centre for Additive Manufacturing (CfAM) have reported a breakthrough in the study of 3D printing electronic devices with graphene.Characterization of the fully inkjet‐printed graphene/hBN FET. Photo from articleThe...